Results for Electronics Engineering MCQ

Telecommunication Objective Questions with answers, UVH,VHF,LED,LCD

February 22, 2019


Telecommunication Objective Questions with answers, UVH,VHF,LED,LCD

TELECOMMUNICATION

Wireless radio communication was developed by
Ans : Guglielmo Marconi

First telecommunication device was
Ans : Telegraph

The frequencies transmitted by TV station is called
Ans : Channel

For radio transmission BBC uses
Ans : Short waves

Short waves ranging  from 14m to 60m are used for
Ans : International communication

The waves which travel long distances without loss in intensity
Ans : Short waves (14m to 60m)

Short waves ranging from 14m to 60m are used for
Ans : International communication

The waves which travel long distance without loss in intensity
Ans : Short waves (14m to 60m)


VERY HIGH FREQUENCY (VHF)

Electro magnetic spectrum between 30MHz and 300 MHz is called
Ans:VHF
VHF is used in
Ans:Radio Transmission and Radar

ULTRA HIGH FREQUENCY (UHF) 

Frequency ranging from 300 MHZ to 3GHz is called
Ans : UHF
UHF is used in 
Ans : Ratio Transmission and Radar



ULTRA HIGH FREQUENCY

Frequency ranging from 300MHZ to 3GHz is called
Ans : UHF
UHF is used in
Ans : T.V, Communication of satellite etc.
Telex
Ans : Teleprinter Exchange
The device used for communicating the text and images through telephone lines
Ans : Fax machine
The device used to convert audio frequency signals into sound
Ans : Loudspeaker
The instrument which has ability to convert sound into magnetic energy
Ans : Tape recorder

LCD AND LED

LCD - Liquid Crystal Display  
LED - Light Emitting Diode
LED is used as monitor, clocks, watches, calculators, telephones etc.
LED was invented by
Ans : Oleg Losev and Nick Holonyak
Working principle of LED 
Ans : Electroluminescence


Telecommunication Objective Questions with answers, UVH,VHF,LED,LCD Telecommunication Objective Questions with answers, UVH,VHF,LED,LCD Reviewed by Sikha on February 22, 2019 Rating: 5

Objective Questions on Basic Electronics- Semiconductor, Integrated Circuits, Logic Gates

February 21, 2019




Objective Questions on Basic Electronics- Semiconductor, Integrated Circuits, Logic Gates


Objective Questions ELECTRONICS



The study of nature, control, and application of electrons

Ans: Electronics

Vacuum tubes work on the principle of 
Ans : Thermionic emission 

The simplest form of a vacuum tube 
Ans : Diode

The device used to convert alternating current (AC) to Direct Current (DC) 
Ans : Rectifiers 


The device which converts DC energy into AC energy
Ans : Electronic oscillator 

The process which makes the current to pass in the same direction is called 
Ans : Rectification

Now thermionic valves are completely replaced by
Ans : Transistors

Miracle child of electronics 
Ans : Transistor 

Triode was invented by 
Ans : Lee De Forest 

Element used in solar cells 
Ans : Silicon

SEMI CONDUCTORS



Materials whose conductivity lies between conductors and insulators

Ans : Semi conductors

Examples of semiconductors are
Ans : Germanium, Silicon

Semi conductor in pure state is called
Ans : Intrinsic Semiconductors

In intrinsic, number of holes is equal to number of
Ans : Electrons

The process to improve conductivity 
Ans : Doping


Process of adding controlled impurities to a pure semiconductor is known as 
Ans : Doping

The substances used for doping 
Ans : Dopants

An intrinsic semiconductor undergoes doping, change into
Ans : Extrinsic semiconductor 

Extrinsic are of two types:
(1)N-type semiconductor
(2)P-type semiconductor 

In N-type, charge carriers are
Ans : Electrons


An intrinsic semiconductors have
Trivalent impurity (eg: Boron, Gallium)
Pentavalent impurity (eg: Antimony, Arsenic)



SEMI CONDUCTORS ARE USED MAINLY IN



Solar cells (silicon)    transistors

diodes    Integrated circuits (IC)

DIODE



The electronic device which has semiconducting property that allows current to flow in one direction 

Ans : Diode

Diode is mostly used to convert 
Ans : AC to DC

Diode is used as a 
Ans : Rectifier

Zener diode is used as 
Ans : Voltage regulator

TRANSISTOR



A semiconductor device used to amplify or switch electronic signals and electrical power

Ans : Transistor


Transistor is operated at low temperatures and voltages.

Three regions of a transistor
Ans : Emitter, Base, Collector 

Transistor transfers a signal from a low resistance to
Ans : High resistance 

Transistor was invented by
Ans : John Bardeen, W.H. Brattain and William Shockley 

Electronic intelligene is called 
Ans : ELINT

INTEGRATED CIRCUITS (IC)



The circuits that act as transistors, diodes, resistors etc is called

Ans : Integrated Circuits 

'IC' chips are made up of
Ans : Silicon or Germanium 

IC was invented by 
Ans : Jack Kilby

IC chip using Silicon was invented by 
Ans : Robert Noyce

GATES



The electronic circuit which works only on two voltage levels (0 and 1) is called 

Ans : Gates

LOGIC GATES ARE



1. AND Gate 

2. OR Gate 
3. NOT gate


Universal logics are - NAND, NOR

Voltage levels In a circuit is either represented by
Ans : '1' or '0'

The level '1' represents
Ans : High voltage level

The level '0' represents
Ans : Zero voltage level

Read also; 

You can Watch free video Lessons Here

You Can Join Telegram Here.


Objective Questions on Basic Electronics- Semiconductor, Integrated Circuits, Logic Gates Objective Questions on Basic Electronics- Semiconductor, Integrated Circuits, Logic Gates Reviewed by Sikha on February 21, 2019 Rating: 5

Basic Electronics Expected Questions for Industrial Extension officer, RRB ,SSC

January 22, 2019
INDUSTRIAL EXTENSION Officer Exam coaching
EEEMADE EASY


•Application of DC voltage to a diode, transistor, or other device to produce a desired mode of operation is called
•biasing....
•reduction
•bounding
•modulation

Group of eight bits in a binary data is called
•nibble....
•bitwidth
•byte
•word


Transistor in which both free electrons and holes are current carriers is termed as
•bipolar transistor....
•dipolar transistor
•tripolar transistor
•semipolartransistor


Amount of energy required to produce full conduction across pnjunction in forward bias is called
•barrier potential....
•barrier difference
•barrier intensity
•barrier density

Region of semiconductor which is very thin and lightly doped as compared to other regions is called
•emitter
•collector
•source
•base...

•Process of imparting impurities to an intrinsic semiconductor materials in order to control its conduction characteristics is called
•doping....
•modulation
•differentiation
•integration

LED stands for
•Light Emitting Damp
•Light Emitting Diode......
•Light Emitter Diode
•Long Emitter Diode

•A symbolic diagram representing an electrical or electronic circuit is termed as
•symbolic diagram
•flowchart
•schematic diagram....
•block diagram
•A curve which represents relationship of diode voltage and current is
•VI laplacecurve
•VI characteristic.....
•VI Coupled curve
•VI dominant curve

•Angle which defines whether a light ray will be reflected or refracted when it strikes surface is called
•angle of modulation
•angle of incident
•critical angle.....
•angle of reluctance

•Most numerous charge carrier in a doped semiconductor material is called
•majority carriers....
•minority carriers
•holes
•electrons

•Embedded systems is branch of
•electrical
•electro-mechanical
•electronics....
•telecommunication

•Two transistors; one npnand other pnphaving matched characteristics are termed as
•Captured Symmetry transistors
•Computer Symmetry transistors
•Complementary System transistors
•Complementary Symmetry transistors....

•Resistance of resistor is measured in
•Ohm....
•Farads
•Volts
•Ampere

•Uncharged particle found in nucleus of an atom is
•electron
•proton
•neutron....
•photon

•LASCR stands for
•Light Activated System Controlled Rectifier
•Light Activated Silicon Controlled Rectifier....
•Light Activated System Common Rectifier
•Light Advanced System Controlled Rectifier

•Most heavily doped of three semiconductor regions of a BJT is called
•collector
•base
•emitter.....
•drain

•Removal or addition of an electron from or to a neutral atom so that resulting atom has a net positive or negative charge is called
•determination
•differentiation
•integration
•ionization....

•Application of DC voltage to a diode, transistor, or other device to produce a desired mode of operation is called
•biasing....
•reduction
•bounding
•modulation

•Pls like, share, comment & subscribe…


•You can visit EEE made Easy YouTube Channel Here
www.bibimohanan.com–“My Notebook Blog”
www.notebukofaprfessor.blogspot.com–“ EEE Made Easy” blog for study materials
“ My Notebook” You tube channel for PSC Coaching
Basic Electronics Expected Questions for Industrial Extension officer, RRB ,SSC Basic Electronics Expected Questions for Industrial Extension officer, RRB ,SSC Reviewed by Sikha on January 22, 2019 Rating: 5

Expected questions on Basic Electronics Engineering|RRB JE|SSC JE|Industrial Extension officer

January 13, 2019
Expected questions on Basic Electronics Engineering|RRB JE|SSC JE|Industrial Extension officer



BASIC ELECTRONICS ENGINEERING

1.      When a P-N Junction is reverse biased:

a.      It offer high resistance…..

b.      It breaks down

c.       Its barrier potential decreases

d.      Its depletion layer become narrow

2.      A LED is made up of gallium phosphide semi conductor material emits …………….. radiations

a.      Green

b.      Red

c.       Amber

d.      Either green or red………

3.      For a silicon PN junction, the barrier potential is about

a.      0.7 V…..

b.      0.001 V

c.       0.07 V

d.      1.7 V

4.      The S.C.R is a …………..device

a.      2 layer 1 junction

b.      3 layer 2 junction

c.       4 layer 3 junction…..

d.      5 layer 4 junction

5.      The best value of rectification efficiency for a full wave rectifier is around

a.      81%....

b.      75%

c.       48.5%

d.      99%

6.      A pure semiconductor without any dropping

a.      Intrinsic……

b.      Extrinsic

c.       Doping

d.      Insulator

7.      Germanium has

a.      Ionic bond

b.      Covalent bond………

c.       Metallic bond

d.      Molecular bon

8.      Power diode differ from a signal diode is

a.      Frequency

b.      Voltage

c.       Material

d.      Doping…….

9.      One of the following transistor is also known as double base diode

a.      NPN

b.      PNP

c.       SCR

d.      UJT…….

10.  In CE amplifier I/P and O/P signals are:

a.      120° out of phase

b.      180° out of phase…..

c.       In phase

d.      90° out of phase

11.  Holding current of a SCR is …………….latching current

a.      Equal to

b.      More than

c.       10 times

d.      Less than…….

12.  One advantage of SMPS is

a.      High out put ripple

b.      Less sensitive to input voltage changes…

c.       Noise

d.      Higher size

13.  Miller oscillator is an example for

a.      Hartley oscillator

b.      Colpitts  oscillator

c.       Cristal oscillator….

d.      Wein bridge oscillator

14.  One of the advantage of using free wheeling diode is

a.      Improve input power factor….

b.      Low input voltage

c.       High output current

d.      Perfect rectification


Expected questions on Basic Electronics Engineering|RRB JE|SSC JE|Industrial Extension officer Expected questions on Basic Electronics Engineering|RRB JE|SSC JE|Industrial Extension officer Reviewed by Sikha on January 13, 2019 Rating: 5

Industrial Extension Officer coaching Basic Electronics Semiconductor

December 19, 2018


EEE made easy
Visit "notebukofaprofessor.blogspot.in"  for study materials, note of this video

Q .A semiconductor has ………… temperature coefficient of resistance.

Positive
Zero
Negative.....
None of the above

Q A semiconductor is formed by ……… bonds.

Covalent.....
Electrovalent
Co-ordinate
None of the above

Q.The most commonly used semiconductor is ………..

Germanium
Silicon....
Carbon
Sulphur

Q. A semiconductor has generally ……………… valence electrons.

2
3
6
4....

Q. The resistivity of pure germanium under standard conditions is about ……….

6 x 104Ω cm
60Ω cm....
3 x 106Ω cm
6 x 10-4Ω cm

Q.The resistivity of a pure silicon is about ……………

100 Ω cm
6000 Ω cm.....
3 x 105 Ω m
6 x 10-8 Ω cm

Q. When a pure semiconductor is heated, its resistance …………..

Goes up
Goes down....
Remains the same
Can’t say

Q.When a pentavalent impurity is added to a pure semiconductor, it becomes ………

An insulator
An intrinsic semiconductor
p-type semiconductor
n-type semiconductor.....

Q. Addition of pentavalent impurity to a semiconductor creates many ……..

Free electrons....
Holes
Valence electrons
Bound electrons

Q. A pentavalent impurity has ………. Valence electrons

3
5....
4
6

Q. An n-type semiconductor is ………

Positively charged
Negatively charged
Electrically neutral...
None of the above

Q. A trivalent impurity has ….. valence electrons

4
5
6
3.....

Q. Addition of trivalent impurity to a semiconductor creates many ……..

Holes...
Free electrons
Valence electrons
Bound electrons

Q. A hole in a semiconductor is defined as …………….

A free electron
The incomplete part of an electron pair bond..
A free proton
A free neutron

Q. The impurity level in an extrinsic semiconductor is about ….. of pure semiconductor.

10 atoms for 108 atoms
1 atom for 108 atoms....
1 atom for 104 atoms
1 atom for 100 atoms

Q. As the doping to a pure semiconductor increases, the bulk resistance of the semiconductor ………..

Remains the same
Increases
Decreases....
None of the above

Q.A hole and electron in close proximity would tend to ……….

Repel each other
Attract each other....
Have no effect on each other
None of the above

Q. In a semiconductor, current conduction is due to ……..

Only holes
Only free electrons
Holes and free electrons....
None of the above

Q. The random motion of holes and free electrons due to thermal agitation is called ……….

Diffusion....
Pressure
Ionisation
None of the above

Q. At room temperature, an intrinsic silicon crystal acts approximately as ……

A battery
A conductor
An insulator....
A piece of copper wire
Q. A forward biased pn junction diode has a resistance of the order of

Ω...


None of the above

Q. The battery connections required to forward bias a pn junction are ……

+ve terminal to p and –ve terminal to n...
-ve terminal to p and +ve terminal to n
-ve terminal to p and –ve terminal to n
None of the above

Q. The barrier voltage at a pn junction for germanium is about ………

5 V
3 V
Zero
0.3 V.....

Q. In the depletion region of a pn junction, there is a shortage of ……..

Acceptor ions
Holes and electrons....
Donor ions
None of the above

Q.A reverse bias pn junction has …………

Very narrow depletion layer
Almost no current....
Very low resistance
Large current flow

Q.A pn junction acts as a ……….

Controlled switch
Bidirectional switch
Unidirectional switch....
None of the above

Q. A reverse biased pn junction has resistance of the order of

Ω

MΩ....
None of the above

Q. The leakage current across a pn junction is due to …………..

Minority carriers....
Majority carriers
Junction capacitance
None of the above

Q.When the temperature of an extrinsic semiconductor is increased, the pronounced effect is on……

Junction capacitance
Minority carriers....
Majority carriers
None of the above

Q. With forward bias to a pn junction , the width of depletion layer ………

Decreases....
Increases
Remains the same
None of the above

Q.  The leakage current in a pn junction is of the order of

Aa
mA
kA
µA....

Q. In an intrinsic semiconductor, the number of free electrons ………

Equals the number of holes....
Is greater than the number of holes
Is less than the number of holes
None of the above

Q. At room temperature, an intrinsic semiconductor has ……….

Many holes only
A few free electrons and holes....
Many free electrons only
No holes or free electrons

Q. At absolute temperature, an intrinsic semiconductor has ……….

A few free electrons
Many holes
Many free electrons
No holes or free electrons....

QThe strength of a semiconductor crystal comes from ……..

Forces between nuclei
Forces between protons
Electron-pair bonds.....
None of the above

Industrial Extension Officer coaching Basic Electronics Semiconductor Industrial Extension Officer coaching Basic Electronics Semiconductor Reviewed by Sikha on December 19, 2018 Rating: 5

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